Taiwan Semiconductor Manufacturing Company Limited
SEMICONDUCTOR ARRANGEMENT AND METHOD FOR MAKING

Abstract:

A method for fabricating a semiconductor arrangement includes removing a portion of a first dielectric layer to form a first recess defined by sidewalls of the first dielectric layer, forming a first conductive layer in the first recess, removing a portion of the first conductive layer to form a second recess defined by the sidewalls of the first dielectric layer, forming a second conductive layer in the second recess, where the second conductive layer contacts the first conductive layer, forming a second dielectric layer over the second conductive layer, removing a portion of the second dielectric layer to form a third recess defined by sidewalls of the second dielectric layer, where the second conductive layer is exposed through the third recess, and forming a third conductive layer in the third recess, where the third conductive layer contacts the second conductive layer.