Taiwan Semiconductor Manufacturing Company Limited
SEMICONDUCTOR ARRANGEMENT AND METHOD OF MANUFACTURE

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Abstract:

A method for forming a semiconductor arrangement includes forming a fin. A diffusion process is performed to diffuse a first dopant into the channel region of the fin. A first gate electrode is formed over the channel region of the fin after the first dopant is diffused into the channel region of the fin.

Status:
Application
Type:

Utility

Filling date:

6 Jun 2019

Issue date:

4 Jun 2020