Taiwan Semiconductor Manufacturing Company Limited
SEMICONDUCTOR ARRANGEMENT AND METHOD OF MANUFACTURE
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Abstract:
A method for forming a semiconductor arrangement includes forming a fin. A diffusion process is performed to diffuse a first dopant into the channel region of the fin. A first gate electrode is formed over the channel region of the fin after the first dopant is diffused into the channel region of the fin.
Status:
Application
Type:
Utility
Filling date:
6 Jun 2019
Issue date:
4 Jun 2020