Taiwan Semiconductor Manufacturing Company Limited
SEMICONDUCTOR ARRANGEMENT AND METHOD FOR MAKING
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Abstract:
A method for fabricating a semiconductor arrangement includes performing a first etching of a semiconductive structure to expose a first portion of a sidewall of a first layer adjacent the semiconductive structure. The first etching forms a first protective layer on the first portion of the sidewall of the first layer, and the first protective layer is formed from a first accumulation of by-product material formed from an etchant of the first etching interacting with the semiconductive structure. The method includes performing a first flash to remove at least some of the first protective layer.
Status:
Application
Type:
Utility
Filling date:
1 Oct 2019
Issue date:
4 Jun 2020