Taiwan Semiconductor Manufacturing Company Limited
SEMICONDUCTOR DEVICE AND METHOD FOR FABRICATION

Abstract:

A semiconductor device is provided. The semiconductor device has a semiconductor layer comprising a source/drain region, a first magnetic layer over the semiconductor layer, and a first dielectric layer over the source/drain region and adjacent the first magnetic layer. The semiconductor device has a metal structure extending through the first dielectric layer, a second magnetic layer over the metal structure, and a second dielectric layer over the first magnetic layer and adjacent the first dielectric layer.