Texas Instruments Incorporated
Packaged semiconductor device with electroplated pillars

Last updated:

Abstract:

In a described example, a device includes an overcoat layer covering an interconnect; an opening in the overcoat layer exposing a portion of a surface of the interconnect; a stud on the exposed portion of the surface of the interconnect in the opening; a surface of the stud approximately coplanar with a surface of the overcoat layer; and a conductive pillar covering the stud and covering a portion of the overcoat layer surrounding the stud, the conductive pillar having a planar and un-dished surface facing away from the stud and the overcoat layer.

Status:
Grant
Type:

Utility

Filling date:

1 Feb 2019

Issue date:

17 Aug 2021