Texas Instruments Incorporated
FABRICATING TRANSISTORS WITH IMPLANTING DOPANTS AT FIRST AND SECOND DOSAGES IN THE COLLECTOR REGION TO FORM THE BASE REGION

Abstract:

An integrated circuit includes a transistor that has an collector region, a base region laterally surrounded by the collector region, and an emitter region laterally surrounded by the base region. A silicide layer on the emitter region is laterally spaced apart from the base region by an unsilicided ring. The emitter region is laterally spaced apart from a base contact region that may be covered by a dielectric layer such as a gate oxide layer.