Texas Instruments Incorporated
CAPACITOR COMPRISING A BISMUTH METAL OXIDE-BASED LEAD TITANATE THIN FILM

Abstract:

In some examples, a system comprises a capacitor including a first plate, a second plate, and a ferroelectric material disposed between the first and the second plates and comprising a Bismuth Metal Oxide-Based Lead Titanate thin film. The capacitor further comprises a dielectric layer disposed on a transistor, wherein the capacitor is disposed on the dielectric layer.