Texas Instruments Incorporated
BIPOLAR JUNCTION TRANSISTOR WITH CONSTRICTED COLLECTOR REGION HAVING HIGH GAIN AND EARLY VOLTAGE PRODUCT

Abstract:

A semiconductor device includes a bipolar junction transistor having a collector, a base, and an emitter. The collector includes a current collection region, a constriction region laterally adjacent to the current collection region, and a contact region laterally adjacent to the constriction region, located opposite from the current collection region. The current collection region, the constriction region laterally, and the contact region all have the same conductivity type. The base includes a current transmission region contacting the current collection region and a constricting well laterally adjacent to, and contacting, the current transmission region and contacting the constriction region. The current transmission region and the constricting well have an opposite conductivity type than the current collection region, the constriction region laterally, and the contact region.