Texas Instruments Incorporated
INTEGRATED SCHOTTKY DIODE WITH GUARD RING

Last updated:

Abstract:

Described examples include an integrated circuit having a semiconductor substrate having an epitaxial layer located thereon, the epitaxial layer having a surface. The integrated circuit also has a buried layer formed in the semiconductor substrate, the epitaxial layer located between the buried layer and the surface. The integrated circuit also has a Schottky contact and an ohmic contact formed on the surface. The integrated circuit also has a Pdrift region in the epitaxial layer located between the ohmic contact and the Schottky contact.

Status:
Application
Type:

Utility

Filling date:

14 Jan 2022

Issue date:

5 May 2022