Texas Instruments Incorporated
INTEGRATED SCHOTTKY DIODE WITH GUARD RING
Last updated:
Abstract:
Described examples include an integrated circuit having a semiconductor substrate having an epitaxial layer located thereon, the epitaxial layer having a surface. The integrated circuit also has a buried layer formed in the semiconductor substrate, the epitaxial layer located between the buried layer and the surface. The integrated circuit also has a Schottky contact and an ohmic contact formed on the surface. The integrated circuit also has a Pdrift region in the epitaxial layer located between the ohmic contact and the Schottky contact.
Status:
Application
Type:
Utility
Filling date:
14 Jan 2022
Issue date:
5 May 2022