Texas Instruments Incorporated
SEMICONDUCTOR ON INSULATOR ON WIDE BAND-GAP SEMICONDUCTOR

Abstract:

A semiconductor device includes a first semiconductor structure. The first semiconductor structure includes a first semiconductor material having a band-gap. The first semiconductor structure has a first surface. An insulating layer has first and second opposing surfaces. The first surface of the insulating layer is on the first surface of the first semiconductor structure. A second semiconductor structure is on the second surface of the insulating layer and includes a second semiconductor material having a band-gap that is smaller than the band-gap of the first semiconductor material. A floating electrode couples the first semiconductor structure to the second semiconductor structure.