Texas Instruments Incorporated
Drain-extended transistor

Abstract:

Described examples include an integrated circuit having a semiconductor substrate. The integrated circuit has a transistor that includes a buried layer having within the substrate, the buried layer defining a drift region between the buried layer and the top surface and a body region in the substrate extending from the buried layer to the surface of the substrate. The transistor also having a source formed in the body region, a drain extending from the buried layer to the surface of the substrate, a drift well extending from the buried layer toward the top surface and extending from the body region to the drain, a drift surface layer located between the drift well and the top, and a gate proximate to the surface of the substrate at the body region.