Lam Research Corporation
REMOVING METAL CONTAMINATION FROM SURFACES OF A PROCESSING CHAMBER

Abstract:

A method for cleaning surfaces of a substrate processing chamber includes a) supplying a first gas selected from a group consisting of silicon tetrachloride (SiCU.sub.4), carbon tetrachloride (CCI.sub.4), a hydrocarbon (C.sub.xH.sub.y where x and y are integers) and molecular chlorine (CI.sub.2), boron trichloride (BCI.sub.3), and thienyl chloride (SOCI.sub.2); b) striking plasma in the substrate processing chamber to etch the surfaces of the substrate processing chamber; c) extinguishing the plasma and evacuating the substrate processing chamber; d) supplying a second gas including fluorine species; e) striking plasma in the substrate processing chamber to etch the surfaces of the substrate processing chamber; and f) extinguishing the plasma and evacuating the substrate processing chamber.