Lam Research Corporation
SixNy AS A NUCLEATION LAYER FOR SiCxOy

Abstract:

In one embodiment, the disclosed subject matter is a method to produce a substantially uniform, silicon-carbide layer over both dielectric materials and metal materials. In one example, the method includes forming a silicon-nitride layer over the dielectric materials and the metal materials, and forming the silicon carbide layer over the silicon-nitride layer. Other methods are disclosed.