Lam Research Corporation
PLASMA ETCHING DEVICE WITH PLASMA ETCH RESISTANT COATING

Abstract:

An apparatus for processing a substrate is provided. A chamber wall forms a processing chamber cavity. A substrate support for supporting the substrate is within the processing chamber cavity. A gas inlet for providing gas into the processing chamber is above a surface of the substrate. A window for passing RF power into the processing chamber cavity comprises a quartz window body and a coating of at least one of erbium oxide, erbium fluoride, samarium oxide, samarium fluoride, thulium oxide thulium fluoride, gadolinium oxide, or gadolinium fluoride on a surface of the ceramic window body. A coil is outside of the processing chamber cavity, wherein the window is between the processing chamber cavity and the coil.