Lam Research Corporation
CAPPING LAYER FOR A HAFNIUM OXIDE-BASED FERROELECTRIC MATERIAL

Abstract:

A method of forming ferroelectric hafnium oxide (HfO.sub.2) in a substrate processing system includes depositing an HfO.sub.2 layer on a substrate, depositing a capping layer on the HfO.sub.2 layer, annealing the HfO.sub.2 layer and the capping layer to form ferroelectric hafnium HfO.sub.2, and selectively etching the capping layer to remove the capping layer without removing the HfO.sub.2 layer.