Lam Research Corporation
MODIFYING FERROELECTRIC PROPERTIES OF HAFNIUM OXIDE WITH HAFNIUM NITRIDE LAYERS

Abstract:

A method of forming ferroelectric hafnium oxide (HfO.sub.2) in a substrate processing system includes depositing an HfO.sub.2 layer on a substrate, depositing a hafnium nitride (HfN) layer on the HfO.sub.2 layer; and annealing the HfO.sub.2 layer and the HfN layer to form ferroelectric hafnium HfO.sub.2.