Lam Research Corporation
SELECTIVE DEPOSITION USING HYDROLYSIS

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Abstract:

Methods and apparatuses for selective deposition of metal oxides on metal surfaces relative to dielectric surfaces are provided. Selective deposition is achieved by exposing metal and dielectric surfaces to a blocking reagent capable of forming a hydrolyzable bond with metal while forming a non hydrolyzable bond with the dielectric, and dipping the surfaces in water to cleave the hydrolyzable bond and leave a blocked surface on the dielectric surface, followed by depositing metal oxide selectively on the metal surface relative to the dielectric surface. Blocking reagents are deposited by wet or dry techniques and may include an alkylaminosilane or alkylchlorosilane as examples.

Status:
Application
Type:

Utility

Filling date:

1 Mar 2019

Issue date:

7 Jan 2021