Lam Research Corporation
DC BIAS CIRCUIT AND GAS DELIVERY SYSTEM FOR SUBSTRATE PROCESSING SYSTEMS

Abstract:

A substrate processing system includes an upper electrode and a lower electrode arranged in a processing chamber. A gas delivery system is configured to selectively deliver at least one of a precursor gas, one or more deposition carrier gases, and a post deposition purge gas. An RF generating system is configured to deposit film on a substrate by generating RF plasma in the processing chamber between the upper electrode and the lower electrode while the precursor gas and the one or more deposition carrier gases are delivered by the gas delivery system. A bias generating circuit is configured to selectively supply a DC bias voltage to one of the upper electrode and the lower electrode while the post deposition purge gas is delivered by the gas delivery system. The post deposition purge gas that is delivered by the gas delivery system includes a reactant gas.