Lam Research Corporation
MODIFICATION OF SNO2 SURFACE FOR EUV LITHOGRAPHY

Abstract:

A method for improving EUV lithographic patterning of SnO.sub.2 layers is provided. One method embodiment includes introducing a hydrophobic surface treatment compound into a processing chamber for modifying a surface of an SnO.sub.2 layer. The modification increases the hydrophobicity of the SnO.sub.2 layer. The method also provides for depositing a photoresist layer on the surface of the SnO.sub.2 layer via spin coating. The modification of the surface of the SnO.sub.2 layer enhances adhesion of contact between the photoresist and the SnO.sub.2 layer during and after spin coating.