Lam Research Corporation
Minimization of Carbon Loss in ALD SiO2 Deposition on Hardmask Films
Last updated:
Abstract:
A method for defining thin film layers on a surface of a substrate includes exposing the surface of the substrate to a first precursor via a first plasma to allow the first precursor to be absorbed by the surface of the substrate. A second precursor that is different from the first precursor is applied to the surface of the substrate via a second plasma. The second precursor is a Carbon dioxide precursor that releases sufficient oxygen radicals to react with the first precursor to form an oxide film layer on the surface of the substrate.
Status:
Application
Type:
Utility
Filling date:
1 Jul 2019
Issue date:
23 Jan 2020