Lam Research Corporation
Deposition of aluminum oxide etch stop layers

Abstract:

Aluminum oxide films with a thickness of between about 10-50 .ANG., characterized by a dielectric constant (k) of less than about 7 (such as about 4-6) and having a density of at least about 2.5 g/cm.sup.3 (such as about 3.0-3.2 g/cm.sup.3) are deposited on partially fabricated semiconductor devices over a metal (e.g., cobalt or copper) such that the metal does not show signs of oxidation. In some embodiments, the films are etch stop films.