Lam Research Corporation
Method and apparatus for determining etch process parameters

Abstract:

A method for processing a substrate in a processing chamber using at least one time trace based prediction model is provided. A substrate is dry processed, where the dry processing creates at least one gas by-product. A concentration of the at least one gas by-product is measured. A time trace of the concentration of the at least one gas by-product is determined. The determined time trace of the concentration is provided as input for the at least one time trace based prediction model to obtain at least one process output. The at least one process output is used to adjust at least one process parameter.