Lam Research Corporation
Method for reducing the wet etch rate of a sin film without damaging the underlying substrate

Abstract:

Methods and apparatuses for forming conformal, low wet etch rate silicon nitride films having low hydrogen content using atomic layer deposition are described herein. Methods involve depositing a silicon nitride film at a first temperature using a bromine-containing and/or iodine-containing silicon precursor and nitrogen by atomic layer deposition and treating the silicon nitride film using a plasma at a temperature less than about 100.degree. C. Methods and apparatuses are suitable for forming conformal, dense, low wet etch rate silicon nitride films as encapsulation layers over chalcogenide materials for memory applications.