Apple Inc.
Non-volatile memory control circuit with parallel error detection and correction

Last updated:

Abstract:

An apparatus includes a non-volatile storage circuit that includes a primary copy of a data value in a first storage location and a redundant copy of the data value in a second, different storage location. The data value includes one or more bits. The apparatus further includes an error detection circuit configured to retrieve contents of the first and second storage locations in response to a request for the data value. The error detection circuit is further configured to perform an error correction operation on the retrieved contents of the first and second storage locations to generate a data output responsive to the request, and to perform an error detection operation to generate an error signal that indicates whether the retrieved contents of the first and second storage locations are different.

Status:
Grant
Type:

Utility

Filling date:

8 Aug 2019

Issue date:

15 Jun 2021