Apple Inc.
Isolation structures in film-based image sensors

Abstract:

A method for fabricating an optoelectronic device includes forming an isolation structure between an array of pixel electrodes and a built-in pad (BIP) on a dielectric layer of an integrated circuit, depositing a photosensitive film over the dielectric layer, such that at least one pinch point is formed in the photosensitive film at an edge of the isolation structure. The method further includes depositing an electrode layer, which is at least partially transparent, over the photosensitive film, etching away the photosensitive film from the BIP, and after etching away the photosensitive film, depositing a metal layer over the BIP and in contact with the electrode layer.