Apple Inc.
Photodetectors Integrated into Thin-Film Transistor Backplanes

Last updated:

Abstract:

An electronic device includes a stack, and the stack includes a substrate, and a multi-layer structure deposited on the substrate and including a set of TFTs. The electronic device further includes a photodetector attached to the multi-layer structure and including an organic photosensitive material. The organic photosensitive material is electrically connected to a TFT in the set of TFTs. Another electronic device includes a stack, and the stack includes a substrate, and a multi-layer structure deposited on the substrate. The multi-layer structure includes a first set of layers including a set of TFTs, and a second set of layers including a PIN diode. The PIN diode is configured to operate as a photodetector and receive at least one wavelength of electromagnetic radiation, and is electrically connected to a TFT in the set of TFTs.

Status:
Application
Type:

Utility

Filling date:

31 Jul 2020

Issue date:

18 Feb 2021