Apple Inc.
Vertical Emitters Integrated on Silicon Control Backplane

Abstract:

A method for manufacturing includes fabricating an array (22) of vertical emitters (32) by deposition of multiple epitaxial layers on a III-V semiconductor substrate (20), and fabricating control circuits (30) for the vertical emitters on a silicon substrate (26). Respective front sides (52) of the vertical emitters are bonded to the silicon substrate in alignment with the control circuits. After bonding the respective front sides, the III-V semiconductor substrate is thinned away from respective back sides (50) of the vertical emitters, and metal traces (78) are deposited over the vertical emitters to connect the vertical emitters to the control circuits.