Axcelis Technologies, Inc.
CHARGE STRIPPING FOR ION IMPLANTATION SYSTEMS

Abstract:

An ion implantation system has a source that generates ions from a beam species to form an ion beam, and a mass analyzer mass analyzes the ion beam. An accelerator receives the ion beam having ions at a first charge state and exits the ion beam having ions at a second positive charge state. The accelerator has a charge stripper, a gas source, and a plurality of accelerator stages. The charge stripper converts the ions from the first charge state to the second charge state. The gas source provides a high molecular weight gas, such as hexafluoride, to the charge stripper, and the plurality of accelerator stages respectively accelerate the ions. An end station supports a workpiece to be implanted with ions at the second charge state.