Atomera Incorporated
METHOD FOR MAKING SEMICONDUCTOR DEVICE INCLUDING A SUPERLATTICE WITH DIFFERENT NON-SEMICONDUCTOR MATERIAL MONOLAYERS

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Abstract:

A method for making a semiconductor device may include forming a superlattice on a semiconductor substrate and including a plurality of stacked groups of layers. Each group of layers of the superlattice may include a plurality of stacked base semiconductor monolayers defining a base semiconductor portion and at least one non-semiconductor monolayer constrained within a crystal lattice of adjacent base semiconductor portions. A first at least one non-semiconductor monolayer may be constrained within the crystal lattice of a first pair of adjacent base semiconductor portions and comprise a first non-semiconductor material, and a second at least one non-semiconductor monolayer may be constrained within the crystal lattice of a second pair of adjacent base semiconductor portions and comprise a second non-semiconductor material different than the first non-semiconductor material.

Status:
Application
Type:

Utility

Filling date:

26 Feb 2020

Issue date:

26 Aug 2021