Atomera Incorporated
METHOD FOR MAKING A SEMICONDUCTOR DEVICE USING SUPERLATTICES WITH DIFFERENT NON-SEMICONDUCTOR THERMAL STABILITIES

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Abstract:

A method for making a semiconductor device may include forming first and second superlattices adjacent a semiconductor layer. Each of the first and second superlattices may include stacked groups of layers, with each group of layers including stacked base semiconductor monolayers defining a base semiconductor portion and at least one non-semiconductor monolayer constrained within a crystal lattice of adjacent base semiconductor portions. The second superlattice may have a greater thermal stability with respect to non-semiconductor atoms therein than the first superlattice. The method may further include heating the first and second superlattices to cause non-semiconductor atoms from the first superlattice to migrate toward the at least one non-semiconductor monolayer of the second superlattice.

Status:
Application
Type:

Utility

Filling date:

1 Jul 2021

Issue date:

6 Jan 2022