Atomera Incorporated
Method for making semiconductor device including vertically integrated optical and electronic devices and comprising a superlattice

Last updated:

Abstract:

A method for making a semiconductor device may include forming a plurality of waveguides on a substrate, and forming a superlattice overlying the substrate and waveguides. The superlattice may include a plurality of stacked groups of layers, with each group of layers comprising a plurality of stacked base semiconductor monolayers defining a base semiconductor portion, and at least one non-semiconductor monolayer constrained within a crystal lattice of adjacent base semiconductor portions. The method may further include forming an active device layer on the superlattice comprising at least one active semiconductor device.

Status:
Grant
Type:

Utility

Filling date:

10 Apr 2019

Issue date:

7 Jun 2022