Atomera Incorporated
Method for making superlattice structures with reduced defect densities

Last updated:

Abstract:

A method for making a semiconductor device may include forming a superlattice on a substrate comprising a plurality of stacked groups of layers, with each group of layers including a plurality of stacked base semiconductor monolayers defining a base semiconductor portion, and at least one non-semiconductor monolayer constrained within a crystal lattice of adjacent base semiconductor portions. Moreover, forming at least one of the base semiconductor portions may include overgrowing the at least one base semiconductor portion and etching back the overgrown at least one base semiconductor portion.

Status:
Grant
Type:

Utility

Filling date:

14 Sep 2020

Issue date:

30 Aug 2022