Atomera Incorporated
RADIO FREQUENCY (RF) SEMICONDUCTOR DEVICES INCLUDING A GROUND PLANE LAYER HAVING A SUPERLATTICE

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Abstract:

A radio frequency (RF) semiconductor device may include a semiconductor-on-insulator substrate, and an RF ground plane layer on the semiconductor-on-insulator substrate including a conductive superlattice. The conductive superlattice may include stacked groups of layers, with each group of layers comprising stacked doped base semiconductor monolayers defining a doped base semiconductor portion, and at least one non-semiconductor monolayer constrained within a crystal lattice of adjacent doped base semiconductor portions. The RF semiconductor device may further include a body above the RF ground plane layer, spaced apart source and drain regions adjacent the body and defining a channel region in the body, and a gate overlying the channel region.

Status:
Application
Type:

Utility

Filling date:

3 Mar 2022

Issue date:

8 Sep 2022