Atomera Incorporated
Method for making a semiconductor device including a superlattice within a recessed etch
Last updated:
Abstract:
A method for making a semiconductor device may include forming an isolation region adjacent an active region in a semiconductor substrate, and selectively etching the active region so that an upper surface of the active region is below an adjacent surface of the isolation region and defining a stepped edge therewith. The method may further include forming a superlattice overlying the active region. The superlattice may include stacked groups of layers, with each group of layers comprising stacked base semiconductor monolayers defining a base semiconductor portion, and at least one non-semiconductor monolayer constrained within a crystal lattice of adjacent base semiconductor portions.
Status:
Grant
Type:
Utility
Filling date:
6 Mar 2020
Issue date:
27 Jul 2021