Atomera Incorporated
Method for making a varactor with hyper-abrupt junction region including a superlattice

Abstract:

A method for making a semiconductor device may include forming a hyper-abrupt junction region on a substrate. The hyper-abrupt junction region may include a first semiconductor layer having a first conductivity type, a superlattice layer on the first semiconductor layer, and a second semiconductor layer on the superlattice layer and having a second conductivity type different than the first conductivity type. The superlattice may include stacked groups of layers, with each group of layers including stacked base semiconductor monolayers defining a base semiconductor portion, and at least one non-semiconductor monolayer constrained within a crystal lattice of adjacent base semiconductor portions. The method may further include forming a first contact coupled to the hyper-abrupt junction regions, and forming a second contact coupled to the substrate to define a varactor.