Atomera Incorporated
Varactor with hyper-abrupt junction region including spaced-apart superlattices

Abstract:

A semiconductor device may include a substrate and a hyper-abrupt junction region carried by the substrate. The hyper-abrupt junction region may include a first semiconductor layer having a first conductivity type, a first superlattice layer on the first semiconductor layer, a second semiconductor layer on the first superlattice layer and having a second conductivity type different than the first conductivity type, and a second superlattice layer on the second semiconductor layer. The semiconductor device may further include a first contact coupled to the hyper-abrupt junction regions and a second contact coupled to the substrate to define a varactor. The first and second superlattices may each include stacked groups of layers, with each group of layers including stacked base semiconductor monolayers defining a base semiconductor portion, and at least one non-semiconductor monolayer constrained within a crystal lattice of adjacent base semiconductor portions.