Atomera Incorporated
Inverted T channel field effect transistor (ITFET) including a superlattice

Last updated:

Abstract:

A semiconductor device may include a substrate and an inverted T channel on the substrate and including a superlattice. The superlattice may include stacked groups of layers, with each group of layers including stacked base semiconductor monolayers defining a base semiconductor portion, and at least one non-semiconductor monolayer constrained within a crystal lattice of adjacent base semiconductor portions. The semiconductor device may further include source and drain regions on opposing ends of the inverted T channel, and a gate overlying the inverted T channel between the source and drain regions.

Status:
Grant
Type:

Utility

Filling date:

10 Apr 2019

Issue date:

1 Sep 2020