Atomera Incorporated
Semiconductor device including superlattice structures with reduced defect densities

Last updated:

Abstract:

A semiconductor device may include a substrate and a superlattice on the substrate including a plurality of stacked groups of layers. Each group of layers may include a plurality of stacked base semiconductor monolayers defining a base semiconductor portion and at least one non-semiconductor monolayer constrained within a crystal lattice of adjacent base semiconductor portions. Furthermore, an upper portion of at least one of the base semiconductor portions adjacent the respective at least one non-semiconductor monolayer may have a defect density less than or equal to 1.times.10.sup.5/cm.sup.2.

Status:
Grant
Type:

Utility

Filling date:

30 Aug 2018

Issue date:

18 Feb 2020