Atomera Incorporated
Semiconductor device including superlattice structures with reduced defect densities
Last updated:
Abstract:
A semiconductor device may include a substrate and a superlattice on the substrate including a plurality of stacked groups of layers. Each group of layers may include a plurality of stacked base semiconductor monolayers defining a base semiconductor portion and at least one non-semiconductor monolayer constrained within a crystal lattice of adjacent base semiconductor portions. Furthermore, an upper portion of at least one of the base semiconductor portions adjacent the respective at least one non-semiconductor monolayer may have a defect density less than or equal to 1.times.10.sup.5/cm.sup.2.
Status:
Grant
Type:
Utility
Filling date:
30 Aug 2018
Issue date:
18 Feb 2020