Atomera Incorporated
Semiconductor device with metal-semiconductor contacts including oxygen insertion layer to constrain dopants and related methods
Last updated:
Abstract:
A semiconductor device may include a semiconductor layer and at least one contact in the semiconductor layer. The contact may include at least one oxygen monolayer constrained within a crystal lattice of adjacent semiconductor portions of the semiconductor layer and spaced apart from a surface of the semiconductor layer by between one and four monolayers, and a metal layer on the surface of the semiconductor layer above the at least one oxygen monolayer. The semiconductor portion between the oxygen monolayer and the metal layer may have a dopant concentration of 1.times.10.sup.21 atoms/cm.sup.3 or greater.
Status:
Grant
Type:
Utility
Filling date:
16 Nov 2018
Issue date:
17 Nov 2020