Atomera Incorporated
Semiconductor device with metal-semiconductor contacts including oxygen insertion layer to constrain dopants and related methods

Last updated:

Abstract:

A semiconductor device may include a semiconductor layer and at least one contact in the semiconductor layer. The contact may include at least one oxygen monolayer constrained within a crystal lattice of adjacent semiconductor portions of the semiconductor layer and spaced apart from a surface of the semiconductor layer by between one and four monolayers, and a metal layer on the surface of the semiconductor layer above the at least one oxygen monolayer. The semiconductor portion between the oxygen monolayer and the metal layer may have a dopant concentration of 1.times.10.sup.21 atoms/cm.sup.3 or greater.

Status:
Grant
Type:

Utility

Filling date:

16 Nov 2018

Issue date:

17 Nov 2020