Atomera Incorporated
METHOD FOR MAKING SEMICONDUCTOR DEVICES WITH HYPER-ABRUPT JUNCTION REGION INCLUDING SPACED-APART SUPERLATTICES

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Abstract:

A method for making a semiconductor device may include forming a hyper-abrupt junction region above a substrate and including a first semiconductor layer having a first conductivity type, a first superlattice layer on the first semiconductor layer, a second semiconductor layer on the first superlattice layer and having a second conductivity type different than the first conductivity type, and a second superlattice layer on the second semiconductor layer. The method may further include forming a gate dielectric layer on the second superlattice layer of the hyper-abrupt junction region, forming a gate electrode on the gate dielectric layer, and forming spaced apart source and drain regions adjacent the hyper-abrupt junction region.

Status:
Application
Type:

Utility

Filling date:

17 Jul 2019

Issue date:

21 Jan 2021