Atomera Incorporated
METHOD FOR MAKING A SEMICONDUCTOR DEVICE INCLUDING A SUPERLATTICE AND AN ASYMMETRIC CHANNEL AND RELATED METHODS

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Abstract:

A method for making a semiconductor device may include forming spaced apart first and second doped regions in a substrate. The first doped region may be larger than the second doped region to define an asymmetric channel therebetween. The method may further include forming a superlattice extending between the first and second doped regions to constrain dopant therein. The superlattice may include a plurality of stacked groups of layers, with each group of layers comprising a plurality of stacked base semiconductor monolayers defining a base semiconductor portion, and at least one non-semiconductor monolayer constrained within a crystal lattice of adjacent base semiconductor portions. The method may also include forming a gate overlying the asymmetric channel.

Status:
Application
Type:

Utility

Filling date:

21 Apr 2020

Issue date:

29 Oct 2020