Atomera Incorporated
METHOD FOR MAKING A SEMICONDUCTOR DEVICE INCLUDING COMPOUND SEMICONDUCTOR MATERIALS AND AN IMPURITY AND POINT DEFECT BLOCKING SUPERLATTICE

Abstract:

A method for making a semiconductor device may include forming a recess in a substrate including a first Group IV semiconductor, forming an active layer comprising a Group III-V semiconductor within the recess, and forming a buffer layer between the substrate and active layer and comprising a second Group IV semiconductor. The method may further include forming an impurity and point defect blocking superlattice layer adjacent the buffer layer.