Atomera Incorporated
SEMICONDUCTOR DEVICE INCLUDING COMPOUND SEMICONDUCTOR MATERIALS AND AN IMPURITY AND POINT DEFECT BLOCKING SUPERLATTICE

Abstract:

A semiconductor device may include a substrate including a first Group IV semiconductor having a recess therein, an active layer comprising a Group III-V semiconductor within the recess, and a buffer layer between the substrate and active layer and comprising a second Group IV semiconductor. The semiconductor device may further include an impurity and point defect blocking superlattice layer adjacent the buffer layer.