Lam Research Corporation
SELECTIVELY ETCHING FOR NANOWIRES
Last updated:
Abstract:
A method for selectively etching silicon germanium with respect to silicon in a stack on a chuck in an etch chamber is provided. The chuck is maintained at a temperature below 15.degree. C. The stack is exposed to an etch gas comprising a fluorine containing gas to selectively etch silicon germanium with respect to silicon.
Status:
Application
Type:
Utility
Filling date:
12 Jul 2019
Issue date:
2 Sep 2021