Lam Research Corporation
ETCHING METAL-OXIDE AND PROTECTING CHAMBER COMPONENTS

Abstract:

Various embodiments include methods and chemistries to etch metal-oxide films. In one embodiment, a method of etching tin oxide (SnO.sub.2) films includes using thionyl chloride (SOCl.sub.2) chemistry to produce an etch rate of the SnO.sub.2 films of up to 10-times higher as compared with Cl.sub.2 chemistry for similar flow-rates and process conditions, and gettering oxygen species from the SnO.sub.2 films by using the SOCl.sub.2, thereby forming volatile SO.sub.2 and volatile SnCl.sub.4 to provide human safety and machine safety and operations. Other methods, chemistries, and techniques are disclosed.