Lam Research Corporation
METHOD OF DEPOSITING SILICON NITRIDE FILMS

Last updated:

Abstract:

A method for depositing a silicon nitride layer on a stack is provided. The method comprises providing an atomic layer deposition, comprising a plurality of cycles, wherein each cycle comprises dosing the stack with a silicon containing precursor by providing a silicon containing precursor gas, providing an N.sub.2 plasma conversion, and providing an H.sub.2 plasma conversion.

Status:
Application
Type:

Utility

Filling date:

11 Oct 2019

Issue date:

9 Dec 2021