Lam Research Corporation
METHOD OF DEPOSITING SILICON NITRIDE FILMS
Last updated:
Abstract:
A method for depositing a silicon nitride layer on a stack is provided. The method comprises providing an atomic layer deposition, comprising a plurality of cycles, wherein each cycle comprises dosing the stack with a silicon containing precursor by providing a silicon containing precursor gas, providing an N.sub.2 plasma conversion, and providing an H.sub.2 plasma conversion.
Status:
Application
Type:
Utility
Filling date:
11 Oct 2019
Issue date:
9 Dec 2021