Lam Research Corporation
METHOD ANDD APPARATUS FOR ATOMIC LAYER DEPOSITION OR CHEMICAL VAPOR DEPOSITION

Abstract:

An apparatus is provided comprising a process chamber, a precursor gas source, a reactant gas source, an inhibitor gas source, a passivation gas source, a gas, a switching manifold, and a controller. The switching manifold in a first position provides a fluid connection between the inhibitor gas source and the gas inlet, wherein the switching manifold in a second position provides a fluid connection between the precursor gas source and the gas inlet, wherein the switching manifold in a third position provides a fluid connection between the reactant gas source and the gas inlet, wherein the switching manifold in a fourth position provides a fluid connection between the passivation gas source and the gas inlet; and wherein the switching manifold prevents the gas inlet from being in fluid connection with at least two of the gas sources at a same time