Lam Research Corporation
MOLYBDENUM TEMPLATES FOR TUNGSTEN

Abstract:

Provided herein are low resistance metallization stack structures for logic and memory applications and related methods of fabrication, The methods involve forming bulk conductive films on thin low resistivity transition metal layers that have large grain size. The bulk conductive films follow the grains of the low resistivity transition metal films, resulting in large grain size. Also provided are devices including template layers and bulk films.