Lam Research Corporation
SEMICONDUCTOR MASK RESHAPING USING A SACRIFICIAL LAYER
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Abstract:
Provided herein are methods and related apparatus for mask reconstruction in an etch process. The methods involve depositing a sacrificial layer on the mask layer. The sacrificial layer may be used to protect position on the mask layer. Following mask reshaping, the sacrificial layer may be removed using the same etch process that is used to etch the target material.
Status:
Application
Type:
Utility
Filling date:
26 Feb 2020
Issue date:
10 Mar 2022