Lam Research Corporation
MULTI-LOCATION GAS INJECTION TO IMPROVE UNIFORMITY IN RAPID ALTERNATING PROCESSES

Abstract:

A gas delivery system configured to provide deposition and etch gases to a processing chamber for a rapid alternating process includes a first valve arranged to provide deposition gas from a deposition gas manifold to a first zone of a gas distribution device via a first orifice and provide the deposition gas from the deposition gas manifold to a second zone of the gas distribution device via a second orifice having a diameters than the first orifice. A second valve is arranged to provide etch gas from the etch gas manifold to the first zone of the gas distribution device via a third orifice and provide the etch gas from the etch gas manifold to the second zone of the gas distribution device via a fourth orifice having a different diameter than the third orifice.